Oxide formation and anodic polarization behavior of thin films of amorphous and crystalline Fe-Cr-P alloys prepared by ion beam mixing

نویسندگان

  • J. D. Demaree
  • G. S. Was
  • N. R. Sorensen
چکیده

An experimental program has been conducted to determine the effect of phosphorus on the corrosion and passivation behavior of Fe-Cr-P alloys. Chemically homogeneous 60 nm films of Fe-lOCr-xP (x from 0 to 35 at.%) were prepared by multilayer evaporation followed by ion beam mixing with Kr + ions. Films with a phosphorus content of at least 25 at.!% were found to be entirely amorphous, while films with 15 at.% P consisted of both ~o~hous and bee phases. Rec~stallization of the amorphous phase was accomplished by heating the samples to 450°C in a purified argon flow furnace. Electrochemical polarization tests in an acid solution have shown the Fe-IOCr-xP films to be more corrosion resistant than Fe-lOCr, with the corrosion resistance increasing with the amount of P present. The corrosion resistance is not significantly affected when the amorphous films are recrystallized, indicating that the behavior is chemically controlled and not a result of the amorphous structure. When examined by XPS, the phosphorus appears to enhance passivation by encouraging Cr enrichment in the oxide and by incorporating in the oxide as phosphate.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Chemical and structural effects of phosphorus on the corrosion behavior of ion beam mixed Fe-Cr-P alloys

An experimental program was conducted to determine the mechanisms by which phosphorus affects the corrosion and passi~ation behavior of F e Cr P alloys, "lb idcnti~ separately the ell~cts of structure and chemistry on the corrosion behavior, thin tilms of Fe--ItK'r-xP 10 < x < 35 at.%) were I~-epared by ion beam mixing. Films with a phosphorus content greater than approximately 20 at.% were fou...

متن کامل

Effect of Thickness on Structural and Morphological Properties of AlN Films Prepared Using Single Ion Beam Sputtering

Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...

متن کامل

Preparation and Characterization of Aluminum Nitride Thin Films with the Potential Application in Electro-Acoustic Devices

In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and  silicon  substrates  using  single  ion  beam  sputtering  technique.  The  physical  and  chemical properties  of  prepared  films  were  investigated  by  different  characterization  technique.  X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...

متن کامل

Characterization of Pure and Antimony Doped SnO2 Thin Films Prepared by the Sol-Gel Technique

Pure and antimony doped SnO2 thin films have been prepared by the sol-gel dip coating technique on glass substrate using starting material SnCl2.2H2O as a host and SbCl3 as a dopant. Our experimental results revealed that, the quality of the coated films on the glass depends on process parameters. The effect of annealing temperature, dipping numbe...

متن کامل

Preparation and Characterization of WO3 Electrochromic Films Obtained by the Sol-Gel Process

Tungsten trioxide (WO3) films have been coated on indium thin oxide (ITO) conductive glass substrate, using aqueous solution of peroxotungstic acid (PTA) by the sol-gel dip coating method. X-ray diffractometery (XRD) analysis confirmed monoclinic and triclinic structure for the film and powdered WO3 respectively. Fourier transforms infrared spectroscopy (FT-IR) exhibit...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2002